Density of deep bandgap states in amorphous silicon from the temperature dependence of thin film transistor current

Materials Research Society Symposium Proceedings

Volumn 336, Issue , 1994, Pages 823-828

  Globus, T ^c   Slade, H C ^c   Shur, M ^a   Hack, M ^b  

^a UNIVERSITY OF VIRGINIA   (United States)

^b PALO ALTO RESEARCH CENTER   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BIAS VOLTAGE; CONDUCTION BANDS; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; TEMPERATURE DISTRIBUTION; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS;

AMORPHOUS SILICON THIN FILM TRANSISTORS; APPLIED STRESS; BANDGAP STATE; CHANNEL CURRENTS; DENSITY OF LOCALIZED STATE; DIFFERENTIAL TECHNIQUE; FLAT-BAND VOLTAGE; TEMPERATURE DEPENDENCE;

AMORPHOUS SILICON;

EID: 84897690897     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-336-823     Document Type: Conference Paper

References (0)