A physically-based SPICE model for the leakage current in a-Si:H TFTs accounting for its dependencies on process, geometrical, and bias conditions

Materials Research Society Symposium - Proceedings

Volumn 609, Issue , 2000, Pages

  Servati, P ^a   Nathan, A ^a   Sazonov, A ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); LEAKAGE CURRENTS; LIQUID CRYSTAL DISPLAYS; OHMIC CONTACTS;

BIAS CONDITIONS;

THIN FILM TRANSISTORS;

EID: 0034431057     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-609-a28.3     Document Type: Conference Paper

References (8)

1. Hole transport via dangling-bond states in amorphous hydrogenated silicon nitride
2. Temperature dependent transient leakage currents in amorphous silicon thin film transistors
3. Characterization of photo leakage current of amorphous silicon thin-film transistors
4. Electronic states at the hydrogenated amorphous silicon/silicon nitride interface
5. Compact SPICE modelling and design optimization of low leakage a-Si:H TFTs for large-area imaging systems
6. +μc-Si:H contact layer for low leakage current in a-Si:H thin film transistors
7. Carrier Transport in amorphous silicon-based thin-film transistors studied by spin-dependent transport
8. Electrode interdependence and hole capacitance in capacitance-voltage characteristics of hydrogenated amorphous silicon thin-film transistor