Pentacene thin-film transistors and inverters with plasma-enhanced atomic-layer-deposited Al2O3 gate dielectric

Thin Solid Films

Volumn 515, Issue 5, 2007, Pages 3132-3137

  Koo, Jae Bon ^a   Lim, Jung Wook ^a   Kim, Seong Hyun ^a   Yun, Sun Jin ^a   Ku, Chan Hoe ^a,b   Lim, Sang Chul ^a   Lee, Jung Hun ^a,b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

Al2O3; HMDS; Inverter; Organic transistor; Pentacene; Threshold voltage

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC INVERTERS; GATES (TRANSISTOR); OLEFINS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THRESHOLD VOLTAGE;

GATE DIELECTRICS; ORGANIC TRANSISTORS; PENTACENE; PLASMA-ENHANCED ATOMIC-LAYER-DEPOSITED (PEALD); SATURATION MOBILITY;

THIN FILM TRANSISTORS;

EID: 33845920334     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.08.037     Document Type: Article

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