Pulsed laser deposition of oxide gate dielectrics for pentacene organic field-effect transistors

Thin Solid Films

Volumn 486, Issue 1-2, 2005, Pages 218-221

  Yaginuma, S ^a   Yamaguchi, J ^a   Itaka, K ^a,b   Koinuma, H ^a,b,c  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Laser ablation; Organic field effect transistor; Oxide gate dielectric; Pentacene

Indexed keywords

ALUMINA; ATOMIC FORCE MICROSCOPY; DIELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HYSTERESIS; INSULATING MATERIALS; LASER ABLATION; LEAKAGE CURRENTS; ORGANIC COMPOUNDS; OXIDES; THIN FILMS;

DIELECTRIC LAYERS; ORGANIC FIELD-EFFECT TRANSISTORS; OXIDE GATE DIELECTRICS; PENTACENE;

PULSED LASER DEPOSITION;

EID: 21844451133     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.227     Document Type: Conference Paper

References (23)

1. H. Sirringhaus, T. Kawase, R.H. Friend, T. Shimoda, M. Inbasekaran, W. Wu, and E.P. Woo Science 290 2000 2123
2. Z. Bao Adv. Mater. 12 2000 227
3. F. Eder, H. Klauk, M. Halik, U. Zschieschang, G. Schmid, and C. Dehm Appl. Phys. Lett. 84 2004 2673
4. C.D. Dimitrakopoulos, S. Purushothaman, J. Kymissis, A. Callegari, and J.M. Shaw Science 283 1999 822
5. Y. Kato, S. Iba, R. Teramoto, T. Sekitani, T. Someya, H. Kawaguchi, and T. Sakurai Appl. Phys. Lett. 84 2004 3789
6. C.D. Sheraw, L. Zhou, J.R. Huang, D.J. Gundlach, T.N. Jackson, M.G. Kane, I.G. Hill, M.S. Hammond, J. Campi, B.K. Greening, J. Francl, and J. West Appl. Phys. Lett. 80 2002 1088
7. Y.-Y. Lin, D.J. Gundlach, S.F. Nelson, and T.N. Jackson IEEE Electron Device Lett. 18 1997 606
8. H. Klauk, M. Halik, U. Zschieschang, G. Schmid, W. Radlik, and W. Weber J. Appl. Phys. 92 2002 5259
9. J. Veres, S.D. Ogier, S.W. Leeming, D.C. Cupertino, and S.M. Khaffaf Adv. Funct. Mater. 13 2003 199
10. M. Yoshida, S. Uemura, T. Kodzasa, T. Kamata, M. Matsuzawa, and T. Kawai Synth. Met. 137 2003 967
11. C.D. Dimirakopoulos, I. Kymissis, S. Purushothaman, D.A. Neumayer, P.R. Duncombe, and R.B. Laibowitz Adv. Mater. 11 1999 1372
12. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono Science 300 2003 1269
13. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono Thin Solid Films 445 2003 322
14. J. Lee, J.H. Kim, and S. lm Appl. Phys. Lett. 83 2003 2689
15. L.A. Majewski, M. Grell, S.D. Ogier, and J. Veres Org. Electron. 4 2003 27
16. S.-K. Kang, and H. Ishiwara Jpn. J. Appl. Phys. 41 2002 6899
17. W. Xiang, H. Lu, L. Yan, H. Guo, L. Liu, Y. Zhou, G. Yang, J. Jiang, H. Cheng, and Z. Chen J. Appl. Phys. 93 2003 533
18. K. Shibuya, T. Ohnishi, M. Lippmaa, M. Kawasaki, and H. Koinuma Appl. Phys. Lett. 85 2004 425
19. Y.W. Kwon, D.P. Norton, and G.E. Jellison Jr. Solid-State Electron. 47 2003 2149
20. T. Yu, W. Zhu, C. Chen, X. Chen, and R.G. Krishnan Physica. B 348 2004 440
21. M. Yoshimoto, T. Maeda, T. Ohnishi, H. Koinuma, O. Ishiyama, M. Shinohara, M. Kubo, R. Miura, and A. Miyamoto Appl. Phys. Lett. 67 1995 2615
22. K.H. Sun J. Am. Ceram. Soc. 30 1947 277
23. W.H. Zachariasen J. Am. Ceram. Soc. 54 1932 3841