Electronic structure of P-doped ZnO films with p-type conductivity

Journal of Nanoscience and Nanotechnology

Volumn 6, Issue 11, 2006, Pages 3422-3425

  Vaithianathan, Veeramuthu ^a   Moon, Jong Ha ^a   Chang, Chang Hwan ^b   Asokan, Kandasami ^c   Kim, Sang Sub ^a  

^a Chonnam National University   (South Korea)

^b Research Institute of Industrial Science and Technology (RIST)   (South Korea)

^c INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

Acceptor doping; Electronic structure; X ray absorption spectroscopy; ZnO

Indexed keywords

ACCEPTOR DOPING; CHARGE NEUTRALITY; X-RAY ABSORPTION SPECTROSCOPY;

ABSORPTION SPECTROSCOPY; DOPING (ADDITIVES); ELECTRIC CHARGE; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; PULSED LASER DEPOSITION; ZINC OXIDE;

THIN FILMS;

OXYGEN; PHOSPHORUS; ZINC; ZINC DERIVATIVE; ZINC OXIDE;

ARTICLE; CALIBRATION; CHEMISTRY; ELECTRIC CONDUCTIVITY; ELECTRON; ELECTRONICS; LASER; METHODOLOGY; NANOTECHNOLOGY; PHOTON; SPECTROPHOTOMETRY; TEMPERATURE; X RAY;

CALIBRATION; ELECTRIC CONDUCTIVITY; ELECTRONICS; ELECTRONS; LASERS; NANOTECHNOLOGY; OXYGEN; PHOSPHORUS; PHOTONS; SPECTROPHOTOMETRY; TEMPERATURE; X-RAYS; ZINC; ZINC COMPOUNDS; ZINC OXIDE;

EID: 33845729030     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2006.025     Document Type: Conference Paper

References (19)

1. D. C. Look, Mater. Sci. Eng. B 80, 383 (2001).
2. M. Joseph, H. Tabata, H. Saeki, K. Ueda, and T. Kawai, Physica B 302-303, 140 (2001).
3. D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, Appl. Phys. Lett. 81, 1830 (2002).
4. A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, Nature Mater. 4, 42 (2005).
5. Y. R. Ryu, T. S. Lee, and H. W. White, Appl. Phys. Lett. 83, 87 (2003).
6. D. C. Look, G. M. Renlund, R. H. Burgener II, and J. R. Sizelove, Appl. Phys. Lett. 85, 5269 (2004).
7. T. S. Jeong, M. S. Han, C. J. Youn, and Y. S. Park, J. Appl. Phys. 96, 175 (2004).
8. V. Vaithianathan, B.-T, Lee, and S. S. Kim, Appl. Phys. Lett. 86, 062101 (2005).
9. K.-K. Kim, H.-S. Kim, D.-K. Hwang, J.-H. Lim, and S.-J. Park, Appl Phys. Lett. 83, 63 (2003).
10. Z. G. Yu, H. Gong, and P. Wu, Chem. Mater. 17, 852 (2005).
11. V. Vaithianathan, B.-T. Lee, and S. S. Kim, J. Appl. Phys. 98, 043519 (2005).
12. P. Fons, K. Nakahara, A. Yamada, K. Iwata, K. Matsubara, H. Takasu, and S. Niki, Phys. Stat. Sol. (b) 229, 849 (2002).
13. T. Aoki, Y. Shimizu, A. Miyake, A. Nakamura, Y. Nakanishi, and Y. Hatanaka, Phys. Stat. Sol. (b) 229, 911 (2002).
14. V. Vaithianathan, B.-T. Lee, C.-H. Chang, K. Asokan, and S. S. Kim, Appl. Phys. Lett. 88, 112103 (2006).
15. Y. W. Heo, S. J. Park, K. Ip, S. J. Pearton, and D. P. Norton, Appl. Phys. Lett. 83, 1128 (2003).
16. J. Stöhr, NEXAFS Spectroscopy, Springer, Berlin, 1992.
17. I. Tanaka, T. Mizoguchi, M. Matsui, S. Yoshioka, H. Adachi, T. Yamamoto, T. Okajima, M. Umesaki, W. Y. Ching, Y. Inoue, M. Mizuno, H. Araki, and Y. Shirai, Nat. Mater. 2, 541 (2003).
18. J. W. Chiou, J. C. Jan, H. M. Tsai, C. W. Bao, and W. F. Pong, M.-H. Tsai, I.-H. Hong, R. Klauser, J. F. Lee, J. J. Wu, and S. C. Liu, Appl. Phys. Lett. 84, 3462 (2005).
19. C. L. Dong, C. Persson, L. Vayssieres, A. Augustsson, T. Schmitt, M. Mattesini, R. Ahuja, C. L. Chang, and J.-H. Guo, Phys. Rev. B 70, 195325 (2004).