Evidence for a deep two charge state defect in high energy electron irradiated 4H-SiC

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 481-484

  Alfieri, G ^a   Monakhov, E V ^a   Svensson, B G ^a  

^a UNIVERSITY OF OSLO   (Norway)

Author keywords

4H SiC; Deep Trap; DLTS; Electron Irradiation

Indexed keywords

ANNEALING; CORRELATION METHODS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOSIMETERS; ELECTRON IRRADIATION; HEAT TREATMENT; RATE CONSTANTS; THERMODYNAMIC STABILITY;

4H-SIC; CHARGE STATES; DEEP TRAP; DOPING CONCENTRATION;

SILICON CARBIDE;

EID: 8744254632     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.481     Document Type: Conference Paper

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