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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 12, 2003, Pages 7294-7295

Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(112̄0) and (033̄8)

(3) Kimoto, Tsunenobu a Hashimoto, Kouichi a Matsunami, Hiroyuki a

a KYOTO UNIVERSITY (Japan)

Author keywords

Chemical vapor deposition; Deep level; Non basal plane; Purity; Silicon carbide

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DEEP LEVEL TRANSIENT SPECTROSCOPY; EPITAXIAL GROWTH; FABRICATION; MOS DEVICES; MOSFET DEVICES; RECRYSTALLIZATION (METALLURGY); SURFACE ROUGHNESS;

DEEP LEVEL; NON-BASAL PLANE; PURITY;

SILICON CARBIDE;

EID: 1242300203 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.7294 Document Type: Conference Paper

Times cited : (37)

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