The evolution of cavities in Si at the 3C-SiC/Si interface during 3C-SiC deposition by LPCVD

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 539-543

  Papaioannou, V ^a   Moller H ^b   Rapp, M ^b   Vogelmeier, L ^b   Eickhoff, M ^b   Krotz G ^b   Stoemenos, J ^a  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b DAIMLER AG   (Germany)

Author keywords

Epitaxial growth; Interface structure; Thin film structure

Indexed keywords

CARBONIZATION; CHEMICAL VAPOR DEPOSITION; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SURFACE STRUCTURE; THIN FILMS;

LOW PRESSURE CHEMICAL VAPOR EPITAXY (LPCVD);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0040357283     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00469-3     Document Type: Article

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