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Volumn , Issue , 1999, Pages 275-278
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Stresses in 3C-SiC films grown on Si substrates
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
EPITAXIAL GROWTH;
PRESSURE;
RAMAN SPECTROSCOPY;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON;
STRESSES;
SUBSTRATES;
TENSILE STRESS;
ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION;
LATTICE MISMATCH;
LOAD DEFLECTION TECHNIQUE;
SEMICONDUCTING FILMS;
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EID: 0032598487
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Article |
Times cited : (3)
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References (13)
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