Control of 3C-SiC/Si wafer bending by the "checker-board" carbonization method

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 4, 2005, Pages 524-530

  Chassagne, T ^a,b   Ferro, G ^c   Haas, H ^b   Mank, H ^a   Leycuras, A ^b   Monteil, Y ^c   Soares, F ^d   Balloud, C ^d   Arcade, Ph ^d   Blanc, C ^d   Peyre, H ^d   Juillaguet, S ^d   Camassel, J ^d  

^a SAVOIE TECHNOLAC   (France)

^b CRHEA CNRS   (France)

^c UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^d UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

3C-SIC/SI WAFER BENDING; HETERO-EPITAXIAL GROWTH; TENSILE RE-GROWN LAYERS;

CARBONIZATION; INFRARED SPECTROSCOPY; LATTICE CONSTANTS; RAMAN SPECTROSCOPY; SILICON CARBIDE; THERMAL EXPANSION;

SILICON WAFERS;

EID: 25444470243     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200460415     Document Type: Conference Paper

References (6)

1. T. Chassagne, G. Ferro, C. Gourbeyre, M. Le Berre, D. Barbier, and Y. Monteil, Mater. Sci. Forum 353-356, 155 (2001).
2. T. Chassagne, G. Ferro, H. Haas, A. Leycuras, H. Mank, and Y. Monteil, Mater. Sci. Forum 457-460, 265 (2004).
3. T. Chassagne, G. Ferro, D. Chaussende, F. Cauwet, Y. Monteil, and J. Bouix, Thin Solid Films 402, 83 (2002).
4. D. Olego, M. Cordona, and P. Vogl, Phys. Rev. B 25, 3878 (1982).
5. W. J. Choyke, Z. C. Feng, and J. A. Powell, J. Appl. Phys. 64, 3163 (1988).
6. R. L. Hartman and P. J. Dean, Phys. Rev. B 2, 951 (1970).