Stacking rearrangement at 6H-SiC(0 0 0 1) surfaces during thermal hydrogenation

Surface Science

Volumn 532-535, Issue , 2003, Pages 698-704

  Seyller, Th ^a   Sieber, N ^a   Stark, T ^a   Ley, L ^a   Zorman, C A ^b   Mehregany, M ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b Case Western Reserve University   (United States)

Author keywords

Ellipsometry; Etching; Hydrogen atom; Infrared absorption spectroscopy; Low energy electron diffraction (LEED); Silicon carbide; Surface structure, morphology, roughness, and topography

Indexed keywords

ABSORPTION SPECTROSCOPY; DEHYDROGENATION; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; LOW ENERGY ELECTRON DIFFRACTION; SURFACE PHENOMENA; SURFACE ROUGHNESS;

STACKING REARRANGEMENT;

SILICON CARBIDE;

EID: 0037799884     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00157-2     Document Type: Conference Paper

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