Raman investigation of stress relaxation at the 3C-SiC/Si interface

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 395-398

  Bluet, J M ^a,b   Falkovsky, L A ^a,c   Planes, N ^a   Camassel, J ^a  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^c LANDAU INSTITUTE FOR THEORETICAL PHYSICS   (Russian Federation)

Author keywords

Nonuniform Strain; SOI Substrates; Stress Relaxation

Indexed keywords

DEPOSITION; INTERFACES (MATERIALS); RAMAN SPECTROSCOPY; SILICON CARBIDE; SILICON ON INSULATOR TECHNOLOGY; STRESS RELAXATION;

STRAIN RELAXATION;

SILICON WAFERS;

EID: 3743054744     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.395     Document Type: Article

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