메뉴 건너뛰기




Volumn 118, Issue , 2006, Pages 237-264

IV-VI semiconductors for mid-infrared optoelectronic devices

Author keywords

[No Author keywords available]

Indexed keywords


EID: 33845249950     PISSN: 03424111     EISSN: 15561534     Source Type: Book Series    
DOI: 10.1007/1-84628-209-8_7     Document Type: Article
Times cited : (10)

References (60)
  • 1
    • 0008668060 scopus 로고
    • "Ueber die Stromleitung durch Schwefelmetalle
    • F. Braun, "Ueber die Stromleitung durch Schwefelmetalle ("On Current Flow through Metallic Sulfides"), Annalen der Physik und Chemie 153, 556, (1874).
    • (1874) Annalen Der Physik Und Chemie , vol.153 , pp. 556
    • Braun, F.1
  • 2
    • 0003406742 scopus 로고
    • Many references such as 5th Edition, Wiley mistakenly state that the IV-VI compounds PbS, PbSe, PbTe are indirect gap semiconductors
    • Many references such as C. Kittel, Introduction to Solid State Physics, 5th Edition, Wiley (1976) mistakenly state that the IV-VI compounds PbS, PbSe, PbTe are indirect gap semiconductors.
    • (1976) Introduction to Solid State Physics
    • Kittel, C.1
  • 5
    • 0036771780 scopus 로고    scopus 로고
    • "Nitric Oxide Breath Testing Using Tunable Diode Laser Absorption Spectroscopy: Application in Respiratory Inflammation Monitoring"
    • C. B. Roller, K. Namjou, J. Jeffers, M. Camp, P. J. McCann, and J. Grego, "Nitric Oxide Breath Testing Using Tunable Diode Laser Absorption Spectroscopy: Application in Respiratory Inflammation Monitoring", Applied Optics 41, 6018 (2002).
    • (2002) Applied Optics , vol.41 , pp. 6018
    • Roller, C.B.1    Namjou, K.2    Jeffers, J.3    Camp, M.4    McCann, P.J.5    Grego, J.6
  • 6
    • 0028804109 scopus 로고
    • "Effect of Early vs. Late Intervention with Inhaled Corticosteroids in Asthma"
    • O. Selroos, A. Pietinalho, AB. Löfroos, H. Riska. "Effect of Early vs. Late Intervention with Inhaled Corticosteroids in Asthma", Chest 108, 1228-1234 (1995).
    • (1995) Chest , vol.108 , pp. 1228-1234
    • Selroos, O.1    Pietinalho, A.2    Löfroos, A.B.3    Riska, H.4
  • 7
    • 0035836626 scopus 로고    scopus 로고
    • "Correlation of breath ammonia with blood urea nitrogen and creatinine during hemodialysis"
    • L. R. Narasimhan, W. Goodman, and C. K. N. Patel, "Correlation of breath ammonia with blood urea nitrogen and creatinine during hemodialysis", Proc. National Academy of Sciences 98, 4617 (2001).
    • (2001) Proc. National Academy of Sciences , vol.98 , pp. 4617
    • Narasimhan, L.R.1    Goodman, W.2    Patel, C.K.N.3
  • 8
    • 0036227810 scopus 로고    scopus 로고
    • "Breath biomarkers for detection of human liver diseases: Preliminary study"
    • S. S. Sehnert, L. Jiang, J. F. Burdick, T. H. Risby, "Breath biomarkers for detection of human liver diseases: Preliminary study", Biomarkers 7, 174 (2002).
    • (2002) Biomarkers , vol.7 , pp. 174
    • Sehnert, S.S.1    Jiang, L.2    Burdick, J.F.3    Risby, T.H.4
  • 11
    • 0031582880 scopus 로고    scopus 로고
    • "Quantitative analysis by gas chromatography of volatile carbonyl compounds in expired air from mice and human"
    • S. E. Ebeler, A. J. Clifford, and T. Shibamoto, "Quantitative analysis by gas chromatography of volatile carbonyl compounds in expired air from mice and human", Journal of Chromatography B 702, 211 (1997).
    • (1997) Journal of Chromatography B , vol.702 , pp. 211
    • Ebeler, S.E.1    Clifford, A.J.2    Shibamoto, T.3
  • 13
    • 0030569842 scopus 로고    scopus 로고
    • "Low Threshold PbEuSeTe/PbTe Separate Confinement Buried Heterostructure Diode Lasers"
    • Z. Feit, M. McDonald, R. J. Woods, V. Archambault, and P. Mak, "Low Threshold PbEuSeTe/PbTe Separate Confinement Buried Heterostructure Diode Lasers", Applied Physics Letters 68, 738 (1996).
    • (1996) Applied Physics Letters , vol.68 , pp. 738
    • Feit, Z.1    McDonald, M.2    Woods, R.J.3    Archambault, V.4    Mak, P.5
  • 14
    • 0036138192 scopus 로고    scopus 로고
    • "Band gaps, effective masses and refractive indices of PbSrSe thin films: Key properties for mid-infrared optoelectronic device applications"
    • W. Z. Shen, H. F. Yang, L. F. Jiang, K. Wang, G. Yu, H. Z. Wu and P. J. McCann, "Band gaps, effective masses and refractive indices of PbSrSe thin films: Key properties for mid-infrared optoelectronic device applications", Journal of Applied Physics 91, 192 (2002).
    • (2002) Journal of Applied Physics , vol.91 , pp. 192
    • Shen, W.Z.1    Yang, H.F.2    Jiang, L.F.3    Wang, K.4    Yu, G.5    Wu, H.Z.6    McCann, P.J.7
  • 19
    • 49149138325 scopus 로고
    • "MBE Techniques for IV-VI Optoelectronic Devices"
    • Pergamon Press, Great Britain
    • H. Holloway and J. N. Walpole, "MBE Techniques for IV-VI Optoelectronic Devices", Prog. Crystal Growth Character. Vol. 2, Pergamon Press, Great Britain (1979).
    • (1979) Prog. Crystal Growth Character , vol.2
    • Holloway, H.1    Walpole, J.N.2
  • 20
    • 0000397044 scopus 로고    scopus 로고
    • "IV-VI Compound Mid-Infrared High-Reflectivity Mirrors and Vertical-Cavity Surface-Emitting Lasers Grown by Molecular Beam Epitaxy"
    • Z. Shi, G. Xu, P. J. McCann, X. M. Fang, N. Dai, C. L. Felix, W. W. Bewley, I. Vurgaftman, and J. R. Meyer, "IV-VI Compound Mid-Infrared High-Reflectivity Mirrors and Vertical-Cavity Surface-Emitting Lasers Grown by Molecular Beam Epitaxy", Applied Physics Letters 76, 3688 (2000).
    • (2000) Applied Physics Letters , vol.76 , pp. 3688
    • Shi, Z.1    Xu, G.2    McCann, P.J.3    Fang, X.M.4    Dai, N.5    Felix, C.L.6    Bewley, W.W.7    Vurgaftman, I.8    Meyer, J.R.9
  • 21
    • 0942288616 scopus 로고    scopus 로고
    • "Continuous Wave Optically Pumped Lead-Salt Mid-Infrared Quantum-Well Vertical-Cavity Surface-Eemitting Lasers"
    • F. Zhao, H. Wu, A. Majumdar, and Z. Shi, "Continuous Wave Optically Pumped Lead-Salt Mid-Infrared Quantum-Well Vertical-Cavity Surface-Eemitting Lasers", Applied Physics Letters 83, 5133 (2003).
    • (2003) Applied Physics Letters , vol.83 , pp. 5133
    • Zhao, F.1    Wu, H.2    Majumdar, A.3    Shi, Z.4
  • 24
    • 0030167901 scopus 로고    scopus 로고
    • "Liquid Phase Epitaxy Grown PbSnSeTe/PbSe Double Heterostructure Diode Lasers"
    • Z. Feit, J. Fuchs, D. Kostyk, and W. Jalenak, "Liquid Phase Epitaxy Grown PbSnSeTe/PbSe Double Heterostructure Diode Lasers", Infrared Physics & Technology 37, 439 (1996).
    • (1996) Infrared Physics & Technology , vol.37 , pp. 439
    • Feit, Z.1    Fuchs, J.2    Kostyk, D.3    Jalenak, W.4
  • 25
    • 0034187455 scopus 로고    scopus 로고
    • "Molecular Beam Epitaxy of PbSrSe and PbSe/PbSrSe Multiple Quantum Well Structures for use in Mid-Infrared Light Emitting Devices"
    • X. M. Fang, K. Namjou, I. Chao, P. J. McCann, N. Dai, and G. Tor, "Molecular Beam Epitaxy of PbSrSe and PbSe/PbSrSe Multiple Quantum Well Structures for use in Mid-Infrared Light Emitting Devices", Journal of Vacuum Science and Technology 18, 1720 (2000).
    • (2000) Journal of Vacuum Science and Technology , vol.18 , pp. 1720
    • Fang, X.M.1    Namjou, K.2    Chao, I.3    McCann, P.J.4    Dai, N.5    Tor, G.6
  • 26
    • 0035831904 scopus 로고    scopus 로고
    • "Unambiguous Observation of Subband Transitions from Longitudinal Valley and Oblique Valleys in IV-VI multiple Quantum Wells"
    • H. Z. Wu, N. Dai, M. B. Johnson, P. J. McCann, Z. S. Shi, "Unambiguous Observation of Subband Transitions from Longitudinal Valley and Oblique Valleys in IV-VI multiple Quantum Wells", Applied Physics Letters 78, 2199 (2001).
    • (2001) Applied Physics Letters , vol.78 , pp. 2199
    • Wu, H.Z.1    Dai, N.2    Johnson, M.B.3    McCann, P.J.4    Shi, Z.S.5
  • 27
    • 0037101422 scopus 로고    scopus 로고
    • "Experimental determination of deformation potentials and band nonparabolicity parameters for PbSe"
    • H. Z. Wu, N. Dai, and P. J. McCann, "Experimental determination of deformation potentials and band nonparabolicity parameters for PbSe", Physical Review B 66, 045303 (2002).
    • (2002) Physical Review B , vol.66 , pp. 045303
    • Wu, H.Z.1    Dai, N.2    McCann, P.J.3
  • 28
    • 0029276831 scopus 로고
    • "Optical Properties of Ternary and Quaternary IV-VI Semiconductor Layers on (100) BaF2 Substrates"
    • P. J. McCann, L. Li, J. Furneaux, and R. Wright, "Optical Properties of Ternary and Quaternary IV-VI Semiconductor Layers on (100) BaF2 Substrates", Applied Physics Letters 66, 1355 (1995).
    • (1995) Applied Physics Letters , vol.66 , pp. 1355
    • McCann, P.J.1    Li, L.2    Furneaux, J.3    Wright, R.4
  • 29
    • 0001736443 scopus 로고    scopus 로고
    • "Above-Room-Temperature Continuous Wave Mid-Infrared Photoluminescence from PbSe/PbSrSe Quantum Wells"
    • P. J. McCann, K. Namjou, and X. M. Fang, "Above-Room-Temperature Continuous Wave Mid-Infrared Photoluminescence from PbSe/PbSrSe Quantum Wells", Applied Physics Letters 75, 3608 (1999).
    • (1999) Applied Physics Letters , vol.75 , pp. 3608
    • McCann, P.J.1    Namjou, K.2    Fang, X.M.3
  • 30
    • 33646221436 scopus 로고
    • "Epitaxy of IV-VI Materials on Si with Fluoride Buffers and Fabrication of IR-Sensor Arrays"
    • Institute of Physics Publishing Ltd., London
    • H. Zogg, A. Fach, J. John, J. Masek, P. Müller, and C. Paglino, "Epitaxy of IV-VI Materials on Si with Fluoride Buffers and Fabrication of IR-Sensor Arrays", Narrow Gap Semiconductors 1995, p. 160, Institute of Physics Publishing Ltd., London (1995).
    • (1995) Narrow Gap Semiconductors 1995 , pp. 160
    • Zogg, H.1    Fach, A.2    John, J.3    Masek, J.4    Müller, P.5    Paglino, C.6
  • 32
    • 0000414672 scopus 로고    scopus 로고
    • "Structure of Epitaxial PbSe Grown on Si(111) and Si(100) Without a Fluoride Buffer Layer"
    • P. Müller, A. Fach, J. John, A. N. Tiwari, H. Zogg, and G. Kostorz, "Structure of Epitaxial PbSe Grown on Si(111) and Si(100) Without a Fluoride Buffer Layer", Journal of Applied Physics 79, 1911 (1996).
    • (1996) Journal of Applied Physics , vol.79 , pp. 1911
    • Müller, P.1    Fach, A.2    John, J.3    Tiwari, A.N.4    Zogg, H.5    Kostorz, G.6
  • 37
    • 0035279373 scopus 로고    scopus 로고
    • "Monolithic Heteroepitaxial PbTeon-Si Infrared Focal Plane Array with 96 X 128 Pixels"
    • K. Alchalabi, D. Zimin, H. Zogg, and W. Buttler, "Monolithic Heteroepitaxial PbTeon-Si Infrared Focal Plane Array with 96 X 128 Pixels" IEEE Electron Device Letters 22, 110 (2001).
    • (2001) IEEE Electron Device Letters , vol.22 , pp. 110
    • Alchalabi, K.1    Zimin, D.2    Zogg, H.3    Buttler, W.4
  • 39
    • 85001909557 scopus 로고    scopus 로고
    • "Strain Relaxation in IV-VI Semiconductor Layers Grown on Silicon (100) Substrates"
    • Editors: R. C. Cammarata, M. Nastasi, E. P. Busso, and W. C, Oliver, Materials Research Society, Pittsburgh, PA (Mat. Res. Soc. Symp. Proc. 505, 185 (1998))
    • H. K. Sachar, P. J. McCann, and X. M. Fang, "Strain Relaxation in IV-VI Semiconductor Layers Grown on Silicon (100) Substrates", Thin-Films - Stresses and Mechanical Properties VII, p. 185, Editors: R. C. Cammarata, M. Nastasi, E. P. Busso, and W. C, Oliver, Materials Research Society, Pittsburgh, PA (1998). (Mat. Res. Soc. Symp. Proc. 505, 185 (1998)).
    • (1998) Thin-Films - Stresses and Mechanical Properties VII , pp. 185
    • Sachar, H.K.1    McCann, P.J.2    Fang, X.M.3
  • 40
    • 0033890643 scopus 로고    scopus 로고
    • "Strain Relaxation in PbSnSe and PbSe/PbSnSe Layers Grown by Liquid Phase Epitaxy on (100)-Oriented Silicon"
    • C. P. Li, P. J. McCann, and X. M. Fang, "Strain Relaxation in PbSnSe and PbSe/PbSnSe Layers Grown by Liquid Phase Epitaxy on (100)-Oriented Silicon", Journal of Crystal Growth 208, 423 (2000).
    • (2000) Journal of Crystal Growth , vol.208 , pp. 423
    • Li, C.P.1    McCann, P.J.2    Fang, X.M.3
  • 44
    • 0012422138 scopus 로고    scopus 로고
    • "Apparatus for Fabricating Semiconductor Lasers"
    • U.S. Patent Number 5,629,097, May 13
    • P. J. McCann, "Apparatus for Fabricating Semiconductor Lasers", U.S. Patent Number 5,629,097, May 13, 1997.
    • (1997)
    • McCann, P.J.1
  • 45
    • 0033169425 scopus 로고    scopus 로고
    • "60°C Lead Salt Laser Emission near 5 μm wavelength"
    • U. P. Schiessl and J. Rohr, "60°C Lead Salt Laser Emission near 5 μm wavelength", Infrared Physics and Technology 40, 325 (1999).
    • (1999) Infrared Physics and Technology , vol.40 , pp. 325
    • Schiessl, U.P.1    Rohr, J.2
  • 46
    • 0000600845 scopus 로고    scopus 로고
    • "Above-room-temperature mid-infrared lasing from vertical-cavity surface-emitting PbTe quantum-well lasers"
    • W. Heiss, T. Schwarzl, G. Springholz, K. Biermann, and K. Reimann, "Above-room-temperature mid-infrared lasing from vertical-cavity surface-emitting PbTe quantum-well lasers", Appl. Phys. Lett. 78, 862 (2001).
    • (2001) Appl. Phys. Lett. , vol.78 , pp. 862
    • Heiss, W.1    Schwarzl, T.2    Springholz, G.3    Biermann, K.4    Reimann, K.5
  • 47
    • 79955996174 scopus 로고    scopus 로고
    • "Above-room-temperature optically pumped 4.12 μm midinfrared vertical-cavity surface-emitting lasers"
    • F. Zhao, H. Wu, L. Jayasinghe, and Z. Shi, "Above-room-temperature optically pumped 4.12 μm midinfrared vertical-cavity surface-emitting lasers", Applied Physics Letters 80, 1129 (2002).
    • (2002) Applied Physics Letters , vol.80 , pp. 1129
    • Zhao, F.1    Wu, H.2    Jayasinghe, L.3    Shi, Z.4
  • 52
    • 0001873968 scopus 로고    scopus 로고
    • "Intersubband Terahertz Lasers using Four-Level Asymmetric Quantum Wells"
    • P. Kinslar, P. Harrison, and R. W. Kelsall, "Intersubband Terahertz Lasers using Four-Level Asymmetric Quantum Wells", Journal of Applied Physics 85, 23 (1999).
    • (1999) Journal of Applied Physics , vol.85 , pp. 23
    • Kinslar, P.1    Harrison, P.2    Kelsall, R.W.3
  • 55
    • 0037342299 scopus 로고    scopus 로고
    • "Development of a Novel Epitaxial Layer Segmentation Method for Optoelectronic Device Fabrication"
    • P. H. O. Rappl and P. J. McCann, "Development of a Novel Epitaxial Layer Segmentation Method for Optoelectronic Device Fabrication", IEEE Photonics Technology Letters 15, 374 (2003).
    • (2003) IEEE Photonics Technology Letters , vol.15 , pp. 374
    • Rappl, P.H.O.1    McCann, P.J.2
  • 56
    • 0031104148 scopus 로고    scopus 로고
    • "Finite Element Modeling Predicts Possibility of Thermoelectrically-Cooled Lead-Salt Diode Lasers"
    • K. R. Lewelling and P. J. McCann, "Finite Element Modeling Predicts Possibility of Thermoelectrically-Cooled Lead-Salt Diode Lasers", IEEE Photonics Technology Letters 9, 297 (1997).
    • (1997) IEEE Photonics Technology Letters , vol.9 , pp. 297
    • Lewelling, K.R.1    McCann, P.J.2
  • 58
    • 0141990463 scopus 로고    scopus 로고
    • "High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers"
    • G. Kim, L. Shterengas, R. U. Martinelli, G. L. Belenky, "High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers", Applied Physics Letters 83, 1926 (2003).
    • (2003) Applied Physics Letters , vol.83 , pp. 1926
    • Kim, G.1    Shterengas, L.2    Martinelli, R.U.3    Belenky, G.L.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.