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Volumn 15, Issue 3, 2003, Pages 374-376

Development of a novel epitaxial-layer segmentation method for optoelectronic device fabrication

Author keywords

Current versus voltage; Epitaxial liftoff; IV VI semiconductors; Laser fabrication; P n junction.

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; FABRICATION; LASERS; MOLECULAR BEAM EPITAXY; SUBSTRATES;

EID: 0037342299     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.807910     Document Type: Article
Times cited : (16)

References (16)
  • 1
  • 5
    • 0000339975 scopus 로고    scopus 로고
    • Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates
    • W. S. Wong, M. Kneissl, P. Mei, D. W. Treat, M. Teepe, and N. M. Johnson, "Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates," Appl. Phys. Lett., vol. 78, p. 1198, 2001.
    • (2001) Appl. Phys. Lett. , vol.78 , pp. 1198
    • Wong, W.S.1    Kneissl, M.2    Mei, P.3    Treat, D.W.4    Teepe, M.5    Johnson, N.M.6
  • 6
    • 0033895758 scopus 로고    scopus 로고
    • Fabrication of thin film cleaved cavities using a bonding and cleaving fixture
    • Jan.
    • D. W. McAlister, P. J. McCann, H. Z. Wu, and X. M. Fang, "Fabrication of thin film cleaved cavities using a bonding and cleaving fixture," IEEE Photon. Technol. Lett., vol. 12, p. 22, Jan. 2000.
    • (2000) IEEE Photon. Technol. Lett. , vol.12 , pp. 22
    • McAlister, D.W.1    McCann, P.J.2    Wu, H.Z.3    Fang, X.M.4
  • 10
    • 0001736443 scopus 로고    scopus 로고
    • Above-room-temperature continuous wave mid-infrared photoluminescence from PbSe/PbSrSe quantum wells
    • P. J. McCann, K. Namjou, and X. M. Fang, "Above-room-temperature continuous wave mid-infrared photoluminescence from PbSe/PbSrSe quantum wells," Appl. Phys. Lett., vol. 75, p. 3608, 1999.
    • (1999) Appl. Phys. Lett. , vol.75 , pp. 3608
    • McCann, P.J.1    Namjou, K.2    Fang, X.M.3
  • 11
    • 0034187455 scopus 로고    scopus 로고
    • Molecular beam epitaxy of PbSrSe and PbSe/PbSrSe multiple quantum well structures for use in mid-infrared light emitting devices
    • X. M. Fang, K. Namjou, I. Chao, P. J. McCann, N. Dai, and G. Tor, "Molecular beam epitaxy of PbSrSe and PbSe/PbSrSe multiple quantum well structures for use in mid-infrared light emitting devices," J. Vac. Sci. Technol., vol. 18, p. 1720, 2000.
    • (2000) J. Vac. Sci. Technol. , vol.18 , pp. 1720
    • Fang, X.M.1    Namjou, K.2    Chao, I.3    McCann, P.J.4    Dai, N.5    Tor, G.6
  • 15
    • 0001171311 scopus 로고    scopus 로고
    • Infrared p-n-junction diodes in epitaxial narrow gap PbTe layers on Si substrates
    • J. John and H. Zogg, "Infrared p-n-junction diodes in epitaxial narrow gap PbTe layers on Si substrates," J. Appl. Phys., vol. 85, p. 3364, 1999.
    • (1999) J. Appl. Phys. , vol.85 , pp. 3364
    • Zogg, J.1    John, H.2
  • 16
    • 0000820010 scopus 로고
    • Growth of narrow gap epilayers and p-n junctions on silicon for infrared detectors arrays
    • C. Boschetti, P. H. O. Rappl, A. Y. Ueta, and I. N. Bandeira, "Growth of narrow gap epilayers and p-n junctions on silicon for infrared detectors arrays," Infrared Phys., p. 281, 1993.
    • (1993) Infrared Phys. , pp. 281
    • Boschetti, C.1    Rappl, P.H.O.2    Ueta, A.Y.3    Bandeira, I.N.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.