Band gaps, effective masses and refractive indices of PbSrSe thin films: Key properties for mid-infrared optoelectronic device applications

Journal of Applied Physics

Volumn 91, Issue 1, 2002, Pages 192-198

  Shen, W Z ^a   Yang, H F ^a   Jiang, L F ^a   Wang, K ^a   Yu, G ^a   Wu, H Z ^b   McCann, P J ^b  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b University of Oklahoma   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION MEASUREMENTS; BAND OFFSETS; DERIVED MATERIALS; DEVICE DESIGN; EFFECTIVE MASS; EMPIRICAL EQUATIONS; ENERGY DEPENDENT; MATERIAL PARAMETER; MID-INFRARED OPTOELECTRONIC DEVICES; MIDINFRARED LASERS; OPTOELECTRONIC APPLICATIONS; SUBBANDS; TEMPERATURE DEPENDENT; THEORETICAL MODELS;

ENERGY GAP; INFRARED DEVICES; MOLECULAR BEAM EPITAXY; OPTICAL PARAMETRIC OSCILLATORS; OPTOELECTRONIC DEVICES; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THIN FILMS;

REFRACTIVE INDEX;

EID: 0036138192     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1421634     Document Type: Article

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