Molecular beam epitaxy of PbSrSe and PbSe/PbSrSe multiple quantum well structures for use in midinfrared light emitting devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1720-1723

  Fang, X M ^a,d   Namjou, K ^a   Chao, I Na ^a   McCann, P J ^a   Dai, N ^b   Tor, G ^c  

^a University of Oklahoma   (United States)

^b UNIVERSITY OF OKLAHOMA   (United States)

^c UNIVERSITÉ CLERMONT AUVERGNE   (France)

^d Quantum Epitaxial Designs Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; COMPOSITION EFFECTS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LATTICE CONSTANTS; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; REFRACTIVE INDEX; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

EPILAYERS; FABRY-PEROT (FB) INTERFERENCE; MIDINFRARED LIGHT EMITTING DEVICES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034187455     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591460     Document Type: Article

References (15)

1. B. Spanger, U. Schiessl, A. Lambrecht, H. Böttner, and M. Tacke, Appl. Phys. Lett. 53, 2582 (1988).
2. Z. Shi, M. Tacke, A. Lambrecht, and H. Böttner, Appl. Phys. Lett. 66, 2537 (1995).
3. D. Hofstetter, J. Faist, M. Beck, A. Müller, and U. Oesterle, Appl. Phys. Lett. 75, 665 (1999).
4. A. Tredicucci, C. Gmachl, F. Capasso, D. L. Sivco, A. L. Hutchinson, and A. Y. Cho, Appl. Phys. Lett. 74, 638 (1999).
5. W. W. Bewley, C. L. Felix, E. H. Aifer, I. Vurgaftman, L. J. Olafsen, J. R. Meyer, H. Lee, R. U. Martinelli, J. C. Connolly, A. R. Sugg, G. H. Olsen, M. J. Yang, B. R. Bennett, and B. V. Shanabrook, Appl. Phys. Lett. 73, 3833 (1998).
6. R. Klann, T. Hofer, R. Buhleir, T. Elsaesser, and J. W. Tomm, J. Appl. Phys. 77, 277 (1995).
7. P. J. McCann, K. Namjou, and X. M. Fang, Appl. Phys. Lett. 75, 3608 (1999).
8. P. J. McCann, J. Fuchs, Z. Feit, and C. G. Fonstad, J. Appl. Phys. 62, 2994 (1987).
9. Dale L. Partin, Semicond. Semimet. 33, 311 (1991).
10. X. M. Fang, I-Na Chao, B. N. Strecker, P. J. McCann, S. Yuan, W. K. Liu, and M. B. Santos, J. Vac. Sci. Technol. B 16, 1459 (1998).
11. H. R. Riedl and R. B. Schoolar, Phys. Rev. 131, 2082 (1963).
12. P. J. McCann, L. Li, S. Yuan, and J. E. Furneaux, Narrow Gap Semiconductors 1995 (Institute of Physics, London, 1995), p. 150.
13. J. N. Zemel, J. D. Jensen, and J. D. Schoolar, Phys. Rev. A 140, 330 (1965).
14. J. W. Tomm, K. H. Hermann, and A. E. Yunovich, Phys. Status Solidi A 122, 11 (1990).
15. P. C. Findlay, C. R. Pidgeon, R. Kotitschke, A. Hollingworth, B. N. Murdin, C. J. G. M. Langerak, A. F. G. van der Meer, C. M. Ciesla, J. Oswald, G. Homer, G. Springholz, and G. Bauer, Phys. Rev. B 58, 12908 (1998).