Effects of band nonparabolicity on the gain and current density in EuSe-PbSe0.78Te0.22-EuSe IV-VI semiconductor quantum-well lasers

IEEE Journal of Quantum Electronics

Volumn 32, Issue 2, 1996, Pages 236-247

  Khodr, Majed F ^a,b,c   McCann, Patrick J ^a,b,d,e,f   Mason, Bruce A ^b,g,h  

^a University of Oklahoma   (United States)

^b UNIVERSITY OF OKLAHOMA   (United States)

^c KUWAIT UNIVERSITY   (Kuwait)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^f IBM   (United States)

^g UNIVERSITY OF MARYLAND   (United States)

^h UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT DENSITY; ELECTRON ENERGY LEVELS; EUROPIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WELLS;

BAND NONPARABOLICITY;

SEMICONDUCTOR LASERS;

EID: 0030083978     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.481871     Document Type: Article

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