Monolithic heteroepitaxial PbTe-on-Si infrared focal plane array with 96 × 128 pixels

IEEE Electron Device Letters

Volumn 22, Issue 3, 2001, Pages 110-112

  Alchalabi, Karim ^b   Zimin, Dmitri ^b   Zogg, Hans ^a,b   Buttler, Werner ^c  

^a IEEE   (Switzerland)

^b ETH ZURICH   (Switzerland)

^c Ingenieurbüro   (Germany)

Author keywords

Heteroepitaxy; Infrared focal plane arrays; Infrared sensors; Lead chalcogenides

Indexed keywords

HETEROEPITAXY; INFRARED FOCAL PLANE ARRAYS; INFRARED SENSORS; LEAD CHALCOGENIDES; LEAD TELLURIDE; PHOTOVOLTAIC SENSORS;

ETCHING; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; QUANTUM EFFICIENCY; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; TEMPERATURE;

OPTICAL SENSORS;

EID: 0035279373     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.910611     Document Type: Article

References (11)

1. Infrared image sensors
2. Infrared sensor arrays with 3-12 μm cut-off wavelengths in heteroepitaxial narrow gap semiconductors on silicon substrates
3. Photovoltaic IV-VI on silicon infrared devices for thermal imaging applications
4. 2 layers on Si(111), and after many temperature cycles
5. x Se epilayers on Si and their correlation with the performance of infrared photodiodes
6. Infrared p-n junction diodes in epitaxial narrow gap PbTe layers on Si substrates
7. Reduction of threading dislocation densities in heavily lattice mismatched PbSe on Si(111) by glide
8. Hydrogen on Si: Ubiquitous surface termination after wet-chemical processing
9. Latest results of HgCdTe 2048 × 2048 and silicon focal plane array