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Volumn 19, Issue 4, 2001, Pages 1447-1454
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Molecular beam epitaxial growth of IV-VI multiple quantum well structures on Si(111) and BaF2(111) and optical studies of epilayer heating
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Author keywords
[No Author keywords available]
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Indexed keywords
AUGER ELECTRON SPECTROSCOPY;
EPITAXIAL GROWTH;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
MOLECULAR BEAM EPITAXY;
OPTICAL PROPERTIES;
OPTICAL PUMPING;
PHOTOLUMINESCENCE;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SEMICONDUCTING SILICON;
SEMICONDUCTOR QUANTUM WELLS;
TEMPERATURE;
THERMAL CONDUCTIVITY;
AUGER SPECTROSCOPY ANALYSIS;
EPILAYER HEATING;
SEMICONDUCTOR DEVICE STRUCTURES;
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EID: 0035535286
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1385915 Document Type: Conference Paper |
Times cited : (14)
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References (14)
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