Determination of the structural and luminescence properties of nitrides using electron backscattered diffraction and photo- and cathodoluminescence

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 532-536

  Trager Cowan, C ^a   Sweeney, F ^a   Wilkinson, A J ^b   Watson, I M ^a   Middleton, P G ^a   O'Donnell, K P ^a   Zubia, D ^c   Hersee, S D ^c   Einfeldt, S ^d   Hommel, D ^d  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b UNIVERSITY OF OXFORD   (United Kingdom)

^c UNIVERSITY OF NEW MEXICO   (United States)

^d UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ELECTRON DIFFRACTION; GALLIUM NITRIDE; III-V SEMICONDUCTORS; LUMINESCENCE OF INORGANIC SOLIDS; NITRIDES; PHOTOLUMINESCENCE; SAPPHIRE; SUBSTRATES; WIDE BAND GAP SEMICONDUCTORS; ZINC SULFIDE;

CRYSTALLOGRAPHIC PROPERTIES; ELECTRON BACK-SCATTERED DIFFRACTION; EPITAXIALLY LATERALLY OVERGROWN; LUMINESCENCE PROPERTIES; LUMINESCENCE SPECTRUM; NITRIDE THIN FILMS; PHOTOLUMINESCENCE SPECTRUM; SAPPHIRE SUBSTRATES;

THIN FILMS;

EID: 33846669830     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390107     Document Type: Conference Paper

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