High temperature growth of AlN by plasma-enhanced molecular beam epitaxy

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 67, Issue 1, 1999, Pages 80-87

  Fan, Z Y ^a   Rong, G ^a   Browning, J ^a   Newman, N ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; GRAIN BOUNDARIES; LATTICE CONSTANTS; MORPHOLOGY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; STOICHIOMETRY; SUBSTRATES; SURFACE ROUGHNESS; SYNTHESIS (CHEMICAL); X RAY CRYSTALLOGRAPHY;

NITRIDATION; PLASMA ENHANCED MOLECULAR BEAM EPITAXY;

MOLECULAR BEAM EPITAXY;

EID: 0033285395     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00213-5     Document Type: Article

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