Vertically aligned GaN nanotubes - Fabrication and current image analysis

Microelectronic Engineering

Volumn 83, Issue 11-12, 2006, Pages 2441-2445

  Hung, Shang Chao ^a   Su, Yan Kuin ^a   Chang, Shoou Jinn ^a   Chen, Y H ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

C AFM; FESEM; GaN; ICP; Nanotubes

Indexed keywords

ARGON; ATOMIC FORCE MICROSCOPY; CONCENTRATION (PROCESS); ETCHING; GALLIUM NITRIDE; IMAGE ANALYSIS; INDUCTIVELY COUPLED PLASMA;

ALIGNED NANOTUBES; CONDUCTIVE ATOMIC FORCE MICROSCOPY (C-AFM); GAN FILMS; NANOTUBES ETCHED PLANES;

NANOTUBES;

EID: 33751223885     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.04.005     Document Type: Article

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