Contactless electroreflectance spectroscopy of Ga(In)NAs/GaAs quantum well structures containing Sb atoms

Applied Surface Science

Volumn 253, Issue 1 SPEC. ISS., 2006, Pages 152-157

  Kudrawiec, R ^a,b   Gladysiewicz, M ^a   Motyka, M ^a   Misiewicz, J ^a   Yuen, H B ^b   Bank, S R ^b   Wistey, M A ^b   Bae, H P ^b   Harris Jr , James S ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b Stanford University   (United States)

Author keywords

Band offset; Dilute nitrides; Electroreflectance; Quantum wells

Indexed keywords

ANTIMONY; ATOMIC PHYSICS; BAND STRUCTURE; ELECTRONS; REFLECTION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

BAND OFFSET; DILUTE NITRIDES; ELECTROREFLECTANCE; ELECTROREFLECTANCE SPECTROSCOPY; MASS APPROXIMATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33751085909     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.05.111     Document Type: Article

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