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Solid State Communications

Volumn 111, Issue 4, 1999, Pages 223-228

Studies of lattice-matched InGaAs/InAlAs single quantum well by photoreflectance spectroscopy and wet chemical etching

(5) Wang, Y C a,b Hwang, W C a Yang, Z P a Chang, G S a Hwang, J S a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b DEPARTMENT OF PHYSICS (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC FIELD EFFECTS; ETCHING; LIGHT ABSORPTION; LIGHT REFLECTION; MATHEMATICAL TRANSFORMATIONS; OSCILLATIONS; PHASE SHIFT; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SPECTROSCOPIC ANALYSIS;

FRANZ-KELDYSH OSCILLATION; KRAMERS-KRONIG TRANSFORMATION; SINGLE QUANTUM WELLS (SQW);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032637672 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1098(99)00134-9 Document Type: Article

Times cited : (7)

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