Photoreflectance evidence of multiple band gaps in dilute GaInNAs layers lattice-matched to GaAs

Journal of Applied Physics

Volumn 96, Issue 5, 2004, Pages 2576-2579

  Kudrawiec, R ^a   Pavelescu, E M ^b   Wagner, J ^c   Sek G ^a   Misiewicz, J ^a   Dumitrescu, M ^b   Konttinen, J ^b   Gheorghiu, A ^d   Pessa, M ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^c FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^d HYPERION UNIVERSITY   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BONDING; CONCENTRATION (PROCESS); ENERGY GAP; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LATTICE CONSTANTS; MULTILAYERS; NITROGEN; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

DILUTION; LATTICE MATCHING; PHOTOREFLECTANCE; POSTGROWTH ANNEALING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 5044224552     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1776312     Document Type: Article

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