Influence of the annealing temperature on the optical transitions of InGaAsP-based quantum well structures investigated by photoreflectance spectroscopy

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 7, 2005, Pages 1263-1269

  Podhorodecki, A ^a   Kudrawiec, R ^a   Andrzejewski, J ^a   Misiewicz, J ^a   Wojcik, J ^b   Robinson, B J ^b   Thompson, D A ^b   Mascher, P ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURE; LASER STRUCTURES; OPTICAL TRANSITIONS; PHOTOREFLECTANCE (PR);

GROUND STATE; PHASE TRANSITIONS; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; REFLECTION; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS; TEMPERATURE DISTRIBUTION;

INDIUM COMPOUNDS;

EID: 25444440605     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200460913     Document Type: Conference Paper

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