Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1.3-1.55 μm

Journal of Applied Physics

Volumn 96, Issue 11, 2004, Pages 6375-6381

  Yuen, Homan B ^a   Bank, Seth R ^a   Wistey, Mark A ^a   Harris Jr , James S ^a   Moto, Akihiro ^b  

^a Stanford University   (United States)

^b Innovation Core Sumimoto Electric Industries Ltd   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH PARAMETERS; LATTICE STRAINS; MATERIAL PROPERTIES; WAVELENGTH;

LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; PLASMA SOURCES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 17044407862     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1807028     Document Type: Article

References (22)

1. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, Jpn. J. Appl. Phys., Part 1 35, 1273 (1996).
2. M.C. Larson, C.W. Coldren, S.G. Spruytte, H.E. Petersen, and J.S. Harris, Jr., 58th Annual Device Research Conference, Denver, Colorado, 19-21 June 2000.
3. N. Tansu, N.J. Kirsch, and L.J. Mawst, Appl. Phys. Lett. 81, 2523 (2002).
4. R. Johnson et al., Proc. SPIE 4994, 222 (2003).
5. V. Gambin, W. Ha, M.A. Wistey, H.B. Yuen, S.R. Bank, S.M. Kim, and J.S. Harris, Jr., IEEE J. Sci. Top. Quantum Electron. 8, 795 (2002).
6. X. Yang, M.J. Jurkovic, J.B. Heroux, and W.I. Wang, Appl. Phys. Lett. 75, 178 (1999).
7. H. Shimizu, K. Kumada, S. Uchiyama, and A. Kasukawa, Electron. Lett. 36, 1379 (2000).
8. X. Yang, J.B. Heroux, L.F. Mei, and W.I. Wang, Appl. Phys. Lett. 78, 4068 (2001).
9. S.R. Bank, W. Ha, V. Gambin, M.A. Wistey, H.B. Yuen, L.L. Goddard, S.M. Kim, and J.S. Harris, Jr., J. Cryst. Growth 251, 367 (2003).
10. L.H. Li, V. Sallet, G. Patriarche, L. Largeau, S. Bouchoule, K. Merghem, L. Travers, and J.C. Harmand, Electron. Lett. 39, 519 (2003).
11. G. Ungaro, G. LeRoux, R. Teisseir, and J.C. Harmand, Electron. Lett. 35, 1246 (1999).
12. J.C. Harmand, G. Ungaro, L. Largeau, and G. LeRoux, Appl. Phys. Lett. 77, 2482 (2000).
13. K. Volz, V. Gambin, W. Ha, M.A. Wistey, H.B. Yuen, S.R. Bank, and J.S. Harris, Jr., J. Cryst. Growth 251, 360 (2003).
14. S.G. Spruytte, M.C. Larson, W. Wampler, C.W. Coldren, H.E. Petersen, and J.S. Harris, Jr., J. Cryst. Growth 227-228, 506 (2001).
15. X. Sun, S. Wang, J. Hsu, R. Sidhu, X. Zheng, X. Li, J. Campbell, and A. Holmes, Jr., IEEE J. Sci. Top. Quantum Electron. 8, 817 (2002).
16. J. Massies and N. Grandjean, Phys. Rev. B 48, 8502 (1993).
17. E. Tournie, N. Grandjean, A. Trampert, J. Massies, and K. Ploog, J. Cryst. Growth 150, 460 (1995).
18. V. Gambin, V. Lordi, W. Ha, M. Wistey, T. Takizawa, K. Uno, S. Friedrich, and J.S. Harris, Jr., J. Cryst. Growth 251, 408 (2003).
19. V. Lordi, V. Gambin, S. Friedrich, T. Funk, T. Takizawa, K. Uno, and J.S. Harris, Jr., Phys. Rev. Lett. 90, 145505 (2003).
20. P. Klar et al., Phys. Rev. B 64, 121203 (2001).
21. S.R. Bank, M.A. Wistey, L.L. Goddard, H.B. Yuen, V. Lordi, and J.S. Harris, Jr., IEEE J. Quantum Electron. 40, 656 (2004).
22. M.A. Wistey, S.R. Bank, H.B. Yuen, L.L. Goddard, and J.S. Harris, Jr., Electron. Lett. 39, 1822 (2003).