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Volumn 270, Issue 3-4, 2004, Pages 340-345

The tri-methyl-Sb flow and the surfactant time effect on InGaAsN/GaAs-strained MQWs grown by MOCVD

Author keywords

A1. Doping; A1. Low dimensional structures; A1. Photoeurrent; A1. Surfactant; A3. Metalorganic chemical vapor deposition; B1. InGaAsN

Indexed keywords

DIFFUSION; DIODES; DOPING (ADDITIVES); HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL FIBERS; OPTOELECTRONIC DEVICES; PHOTOCURRENTS; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SURFACE ACTIVE AGENTS; X RAY DIFFRACTION ANALYSIS;

EID: 4544321209     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.06.052     Document Type: Article
Times cited : (3)

References (14)
  • 11
    • 4544370967 scopus 로고    scopus 로고
    • K. Barnham, D. Vvedensky (Eds.), Cambridge University Press. Cambridge, (Chapter 6)
    • J. Nelson, in: Low-Dimensional Semiconductor Structures, K. Barnham, D. Vvedensky (Eds.), Cambridge University Press. Cambridge, 2001 (Chapter 6).
    • (2001) Low-dimensional Semiconductor Structures
    • Nelson, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.