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Volumn 270, Issue 3-4, 2004, Pages 340-345
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The tri-methyl-Sb flow and the surfactant time effect on InGaAsN/GaAs-strained MQWs grown by MOCVD
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Author keywords
A1. Doping; A1. Low dimensional structures; A1. Photoeurrent; A1. Surfactant; A3. Metalorganic chemical vapor deposition; B1. InGaAsN
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Indexed keywords
DIFFUSION;
DIODES;
DOPING (ADDITIVES);
HETEROJUNCTIONS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
OPTICAL FIBERS;
OPTOELECTRONIC DEVICES;
PHOTOCURRENTS;
RAPID THERMAL ANNEALING;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR QUANTUM WELLS;
SURFACE ACTIVE AGENTS;
X RAY DIFFRACTION ANALYSIS;
INGAASN;
LOW DIMENSIONAL STRUCTURES;
MULTIJUNCTION SOLAR CELLS;
PHOTOCURRENT SPECTRA;
CRYSTAL GROWTH;
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EID: 4544321209
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.06.052 Document Type: Article |
Times cited : (3)
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References (14)
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