Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off

Applied Physics Letters

Volumn 86, Issue 7, 2005, Pages 1-3

  Zhang, Baijun ^a   Egawa, Takashi ^a   Ishikawa, Hiroyasu ^a   Liu, Yang ^a   Jimbo, Takashi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ETCHING; OHMIC CONTACTS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

FULL WIDTH AT HALF MAXIMUM (FWHM); METAL-TO-METAL BONDING; OPTICAL POWER; SELECTIVE LIFT-OFF (SLO) TECHNIQUE;

LIGHT EMITTING DIODES;

EID: 17044397328     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1863412     Document Type: Article

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