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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 9 AB, 2004, Pages

Barrier thickness dependence of electrical properties and DC device characteristics of AlGaN/GaN heterostructure field-effect transistors grown by plasma-assisted molecular-beam epitaxy

(2) Higashiwaki, Masataka a Matsui, Toshiaki a

a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY (Japan)

Author keywords

AlGaN; Current voltage characteristic; GaN; Heterostructure field effect transistor; Molecular beam epitaxy; Thin barrier; Transconductance

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSCONDUCTANCE;

SAPPHIRE SUBSTRATES; THIN BARRIERS; TRANSMISSION LINE MODEL;

FIELD EFFECT TRANSISTORS;

EID: 9144267255 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.L1147 Document Type: Article

Times cited : (26)

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