Mechanism of charging damage during plasma-enhanced silicon nitride/oxide thin-film deposition

IEEE Transactions on Device and Materials Reliability

Volumn 6, Issue 3, 2006, Pages 448-454

  Cheong, Kin P ^a,b  

^a IEEE   (United States)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

Dielectrics; Plasma damage; Plasma enhanced chemical vapor deposition (PECVD); Vacuum ultraviolet (VUV)

Indexed keywords

PHOTOCONDUCTION; PLASMA DAMAGE; VACUUM ULTRAVIOLET (VUV);

DIELECTRIC FILMS; OHMIC CONTACTS; PHOTOCONDUCTIVITY; PHOTOEMISSION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILMS;

SILICON NITRIDE;

EID: 33750814162     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2006.883545     Document Type: Article

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