Reducing FHDP plasma induced damage with silicon-rich oxide and oxynitride barrier layers

2004 International Conference on Integrated Circuit Design and Technology, ICICDT

Volumn , Issue , 2004, Pages 291-294

  McCulloh, H ^a   O'Conneli, B ^a   Drizlikh, S ^a   Brisbin, D ^a  

^a NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC BARRIER LAYER; FLUORINE DOPED HIGH DENSITY PLASMA DEPOSITION (FHDP); GATE OXIDES; PLASMA DAMAGE;

DEPOSITION; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOBILE ANTENNAS; REFRACTIVE INDEX; SILICA;

PLASMAS;

EID: 4143128896     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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