Effect of high-density plasma etching on the optical properties and surface stoichiometry of ZnO

Applied Physics Letters

Volumn 81, Issue 19, 2002, Pages 3546-3548

  Ip, K ^a   Baik, K H ^a   Overberg, M E ^a   Lambers, E S ^a   Heo, Y W ^a   Norton, D P ^a   Pearton, S J ^a   Ren, F ^a   Zavada, J M ^b  

^a University of Florida   (United States)

^b U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-EDGE PHOTOLUMINESCENCE; CONTROL SAMPLES; ETCH RATES; HIGH DENSITY PLASMAS; ION ENERGIES; ION IMPACT ENERGY; LOW ENERGIES; NEAR-SURFACE; SURFACE STOICHIOMETRY; THRESHOLD ENERGY; ZNO;

AUGER ELECTRON SPECTROSCOPY; ELECTROMAGNETIC INDUCTION; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; IONS; PLASMA ETCHING; STOICHIOMETRY; SURFACE ROUGHNESS; ZINC OXIDE;

OPTICAL PROPERTIES;

EID: 79956057219     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1519095     Document Type: Article

References (35)

1. D. C. Look, Mater. Sci. Eng., B 80, 383 (2001). msb MSBTEK 0921-5107
2. P. Zu, Z. K. Tang, G. K. L. Wong, M. Kawasaki, A. Ohtomo, K. Koinuma, and Y. Sagawa, Solid State Commun. 103, 459 (1997). ssc SSCOA4 0038-1098
3. D. M. Bagnall, Y. R. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen, and T. Goto, Appl. Phys. Lett. 70, 2230 (1997). apl APPLAB 0003-6951
4. M. Wraback, H. Shen, S. Liang, C. R. Gorla, and Y. Lu, Appl. Phys. Lett. 74, 507 (1999). apl APPLAB 0003-6951
5. J.-M. Lee, K.-K. Kim, S.-J. Park, and W.-K. Choi, Appl. Phys. Lett. 78, 3842 (2001). apl APPLAB 0003-6951
6. J. E. Nause, III-V's Review 12, 28 (1999).
7. Y. Chen, D. Bagnell, and T. Yao, Mater. Sci. Eng., B 75, 190 (2000). msb MSBTEK 0921-5107
8. D. C. Look, D. C. Reynolds, J. W. Hemsky, R. L. Jones, and J. R. Sizelove, Appl. Phys. Lett. 75, 811 (1999). apl APPLAB 0003-6951
9. D. C. Look, J. W. Hemsky, and J. R. Sizelove, Phys. Rev. Lett. 82, 2552 (1999). prl PRLTAO 0031-9007
10. F. D. Auret, S. A. Goodman, M. Hayes, M. J. Legodi, H. A. van Laarhoven, and D. C. Look, Appl. Phys. Lett. 80, 956 (2002). apl APPLAB 0003-6951
11. S. O. Kucheyev, J. E. Bradley, J. S. Williams, C. Jagerdish, and M. V. Swain, Appl. Phys. Lett. 80, 956 (2002). apl APPLAB 0003-6951
12. D. C. Reynolds, D. C. Look, and B. Jogai, Solid State Commun. 99, 873 (1996). ssc SSCOA4 0038-1098
13. M. Wraback, H. Shen, S. Liang, C. R. Gorla, and Y. Lu, Appl. Phys. Lett. 74, 507 (1999). apl APPLAB 0003-6951
14. T. Aoki, D. C. Look, and Y. Hatanaka, Appl. Phys. Lett. 76, 3257 (2000). apl APPLAB 0003-6951
15. C. C. Chang and Y. E. Chen, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 44, 624 (1997). itu ITUCER 0885-3010
16. P. M. Verghese and D. R. Clarke, J. Appl. Phys. 87, 4430 (2000). jap JAPIAU 0021-8979
17. C. R. Gorla, N. W. Emanetoglu, S. Liang, W. E. Mayo, Y. Lu, M. Wraback, and H. Shen, J. Appl. Phys. 85, 2595 (1999). jap JAPIAU 0021-8979
18. H. Ohta, K. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono, Appl. Phys. Lett. 77, 475 (2000). apl APPLAB 0003-6951
19. M. Joseph, H. Tabata, and T. Kawai, Jpn. J. Appl. Phys., Part 2 38, 2505 (1999). jjc JAPLD8 0021-4922
20. S. Krishnamoorthy, A. A. Iliadis, A. Inumpudi, S. Choopun, R. D. Vispute, and T. Venkatesan, Solid-State Electron. 46, 1631 (2002). sel SSELA5 0038-1101
21. Y. Li, G. S. Tompa, S. Liang, C. Gorla, C. Lu, and J. Doyle, J. Vac. Sci. Technol. A 15, 1663 (1997). jva JVTAD6 0734-2101
22. J. G. E Gardeniers, Z. M. Rittersma, and G. J. Burger, J. Appl. Phys. 83, 7844 (1998). jap JAPIAU 0021-8979
23. H. Maki, T. Ikoma, I. Sakaguchi, N. Ohashi, H. Haneda, J. Tanaka, and N. Ichinose, Thin Solid Films (to be published).
24. S.-C. Chang, D. B. Hicks, and R. C. O. Laugal, Technical Digest. IEEE Solid-State Sensor and Actuator Workshop, 6, 41 (1992).
25. J. S. Wang, Y. Y. Chen, and K. M. Larkin, Proceedings of the 1982 IEEE Ultrasonic Symposium, 4-8 September 1982 (IEEE, New York, 1982), pp. 345-348.
26. G. D. Swanson, T. Tanagawa, and D. L. Polla, Electrochem. Soc. Ext. Abstracts 90, 1082 (1990).
27. J.-M. Lee, K.-M. Chang, K.-K. Kim, W.-K. Choi, and S. J. Park, J. Electrochem. Soc. 148, G1 (2001). jes JESOAN 0013-4651
28. J.-M. Lee, K.-K. Kim, S.-J. Park, and W.-K. Park, Appl. Phys. Lett. 78, 3842 (2001). apl APPLAB 0003-6951
29. R. J. Shul, M. C. Lovejoy, A. G. Baen, J. C. Zolper, D. J. Rieger, M. J. Hafich, R. F. Corless, and C. B. Vartuli, J. Vac. Sci. Technol. A 13, 912 (1995). jva JVTAD6 0734-2101
30. C. Steinbruchel, Appl. Phys. Lett. 55, 1960 (1989). apl APPLAB 0003-6951
31. K. Pelhos, V. M. Donnelly, A. Kornblit, M. L. Green, R. B. Van Dover, L. Manchanda, and E. Bower, J. Vac. Sci. Technol. A 19, 1361 (2001). jva JVTAD6 0734-2101
32. C. C. Chang, K. V. Guinn, V. M. Donnelly, and I. P. Herman, J. Vac. Sci. Technol. A 13, 1970 (1995). jva JVTAD6 0734-2101
33. H. Kuzami, R. Hamasaki, and K. Tago, Jpn. J. Appl. Phys., Part 1 36, 4829 (1997). jjb JAPNDE 0021-4922
34. A. C. Jones and P. O'Brien, CVD of Compound Semiconductors (VCH, Weinheim, Germany, 1997).
35. S. W. Pang, in Handbook of Advanced Plasma Processing Techniques, edited by R. J. Shul (Springer, Berlin, 2000).