Structural investigation of metalorganic chemical-vapor-deposition-grown InGaAs layers on misoriented GaAs substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 9 A/B, 2000, Pages

  Takano, Yasushi ^a   Masuda, Masako ^a   Shirakawa, Yasufumi ^a   Kuwahara, Kazuhiro ^a   Fuke, Shunro ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

GRADED BUFFER LAYERS; POTENTIAL BARRIERS;

SEMICONDUCTING FILMS;

EID: 0034268366     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l901     Document Type: Article

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