The time-resolved spectroscopy of inGaAs/AlGaAs heterostructures with asymmetric funnel-shape quantum wells for near- and mid-IR lasing

Semiconductor Science and Technology

Volumn 19, Issue 4 SPEC. ISS., 2004, Pages

  Gaponova, D M ^a   Aleshkin, V Ya ^a   Antonov, A V ^a   Revin, D G ^a,d   Vorob'ev, L E ^b   Firsov, D A ^b   Shalygin, V A ^b   Ustinov, V M ^c   Cockburn, J W ^d   Fox, A M ^d  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

^d UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; GROUND STATE; HAMILTONIANS; HETEROJUNCTIONS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPECTROMETERS; STIMULATED EMISSION; STREAK CAMERAS; WAVE EQUATIONS;

INTERBAND TRANSITIONS; PHOTOLUMINESCENCE MEASUREMENTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 11144354949     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/4/091     Document Type: Conference Paper

References (7)

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3. Faist J, Capasso F, Sivco D L and Sirtori C et al 1994 Science 264 553
4. Gauthier-Lafaye O, Boucaud P, Julien F H and Sauvage S et al 1997 Appl. Phys. Lett. 71 3619
5. Kastalsky A, Vorobjev L E, Firsov D A, Zerova V L and Towe E 2001 IEEE J. Quant. Electron. 37 1356
6. Aleshkin V Ya et al 2000 Proc. Workshop Nanophotonics (N Novgorod) p 84
7. Aleshkin V Ya et al 2002 Proc. 10th Int. Symp. Nanostructures: Physics and Technology (St Petersburg) p 229