In situ optical monitoring of metalorganic vapor phase epitaxy growth of C-doped GaAs

Applied Physics A: Materials Science and Processing

Volumn 68, Issue 3, 1999, Pages 349-352

  Rebey, A ^a   El Jani, B ^a   Leycuras, A ^b   Laugt, S ^b   Gibart, P ^b  

^a UNIVERSITY OF MONASTIR   (Tunisia)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CARBON TETRACHLORIDE; CHARGE CARRIERS; DECOMPOSITION; DISLOCATIONS (CRYSTALS); ETCHING; LASER DIAGNOSTICS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; REFRACTIVE INDEX; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

LASER REFLECTOMETRY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033101347     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050901     Document Type: Article

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