Enhanced frequency response associated with negative photoconductance in an InGaAs/InAlAs avalanche photodetector

Applied Physics Letters

Volumn 83, Issue 6, 2003, Pages 1249-1251

  Kim, Gyungock ^a   Kim, In Gyoo ^a   Baek, Jong Hyeob ^a   Kwon, O Kyun ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CURRENT VOLTAGE CHARACTERISTICS; FREQUENCY RESPONSE; PHOTOCONDUCTIVITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THRESHOLD VOLTAGE; TIME DOMAIN ANALYSIS;

AVALANCHE PHOTODETECTORS;

PHOTODETECTORS;

EID: 0041924917     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1600512     Document Type: Article

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16. *≈0.070.