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Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 599-604

MOCVD growth of InGa(Al)As/InAlAs multilayer heterostructures for long wavelength DBRs

(3) Choi, Sung Woo a Suh, Kyung Soo a Lee, Joong Whan a

a Electronics and Telecommunications Research Institute (ETRI) (South Korea)

Author keywords

DBR; Heterostructure; InAlAs; InGaAs; MOCVD growth

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; HETEROJUNCTIONS; INTERFACES (MATERIALS); LASER BEAMS; LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REFLECTOMETERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

DISTRIBUTED BRAGG REFLECTORS (DBR); LASER BEAM REFLECTOMETRY; SEMICONDUCTING INDIUM ALUMINUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ALUMINUM ARSENIDE;

SEMICONDUCTOR SUPERLATTICES;

EID: 0031547366 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00023-7 Document Type: Article

Times cited : (4)

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