Annealing effects on lattice-strain-relaxed In0.5Al0.5As/In0.5Ga0.5As heterostructures grown on GaAs substrates

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 271-275

  Mishima, T ^a   Kudo, M ^a   Kasai, J ^a   Higuchi, K ^a   Nakamura, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); HALL EFFECT; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

HALL MOBILITY;

SEMICONDUCTOR GROWTH;

EID: 0032683563     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01338-4     Document Type: Article

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