Highly reflective 1.55 μm In1-x-yGaxAlyAs/In1-zAlzAs quaternary Bragg mirrors grown by metalorganic chemical vapor deposition (MOCVD)

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 6, 1997, Pages

  Choi, Sung Woo ^a   Park, Hyung Moo ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

LASER BEAMS; LIGHT REFLECTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REFLECTOMETERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

LASER BEAM REFLECTOMETRY; QUATERNARY BRAGG MIRRORS;

MIRRORS;

EID: 0031153068     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l740     Document Type: Article

References (8)