Introducing Monte Carlo diffusion simulation into TCAD tools

2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002

Volumn , Issue , 2002, Pages 247-250

  Strecker, Norbert ^a   Moroz, Victor ^a   Jaraiz, Martin ^b  

^a SYNOPSYS INC   (United States)

^b UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

Diffusion; Monte Carlo; Process, simulation; TCAD

Indexed keywords

AGGREGATES; ALGEBRA; COMPUTER SIMULATION; DIFFUSION; DOPING (ADDITIVES); ETCHING; MONTE CARLO METHODS; MOSFET DEVICES; OXIDATION; PARTIAL DIFFERENTIAL EQUATIONS; THERMODYNAMICS;

DOPANTS; MONTE CARLO DIFFUSION SIMULATIONS; SIMULATION DOMAINS; TCAD;

COMPUTER AIDED DESIGN;

EID: 6344219957     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. M. Jaraiz, P. Castrillo, R. Pinacho, et al., "Atomistic Front-End Process Modelling: A Powerful Tool for Deep-Submicron Device Fabrication", SISPAD 2001 Proceedings, Springer-Verlag, pp. 10-17, 2001.
2. Taurus Process 2001.4 User's Manual, Avant! Corporation, 2001.
3. Asen Asenov, "3D Statistical Simulation of Intrinsic Fluctuations in Decanano MOSFETs Introduced by Discrete Dopants, Oxide Thickness Fluctuations and LER, SISPAD 2001 Proceedings, Springer-Verlag, pp. 162-169, 2001.