Fabrication of low-temperature poly-Si thin film transistors with self-aligned graded lightly doped drain structure

Electrochemical and Solid-State Letters

Volumn 5, Issue 1, 2002, Pages

  Cheng, Huang Chung ^a   Lin, Ching Wei ^a   Cheng, Li Jing ^a   Tseng, Chang Ho ^a   Chang, Ting Kuo ^a   Peng, Yuan Ching ^b   Wang, Wen Tung ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; ETCHING; EXCIMER LASERS; IRRADIATION; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; PHOTORESISTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

EXCIMER LASER IRRADIATION; LOW LEAKAGE CURRENT CHARACTERISTICS; LOW TEMPERATURE POLY SILICON THIN FILM TRANSISTORS; SELF ALIGNED GRADED LIGHTLY DOPED DRAIN STRUCTURE;

THIN FILM TRANSISTORS;

EID: 0036226601     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1421748     Document Type: Article

References (5)