A novel self-aligned poly-si TFT with field-induced drain formed by the damascene process

IEEE Electron Device Letters

Volumn 26, Issue 4, 2005, Pages 249-251

  Park, Joon Ha ^a   Kim, Ohyun ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Chemical mechanical polishing (CMP); Damascene; Field induced drain (FID); Thin film transistor (TFT)

Indexed keywords

CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC FIELDS; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; LEAKAGE CURRENTS; POLYSILICON;

DAMASCENE PROCESS; FIELD INDUCED DRAIN (FID);

THIN FILM TRANSISTORS;

EID: 17644399113     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.845024     Document Type: Article

References (12)

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