An air spacer technology for improving short-channel immunity of MOSFETs with raised source/drain and high-κ gate dielectric

IEEE Electron Device Letters

Volumn 26, Issue 5, 2005, Pages 323-325

  Yin, Chunshan ^a   Chan, Philip C H ^a   Chan, Mansun ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Air spacer; Gate insulator; High dielectric; Raised source drain (S D); Silicon on insulator (SOI); Ultrathinbody (UTB)

Indexed keywords

CAPACITANCE; DIELECTRIC DEVICES; ELECTRIC RESISTANCE; GATES (TRANSISTOR); PERMITTIVITY; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; ULTRATHIN FILMS;

AIR SPACER; GATE DIELECTRIC; GATE INSULATOR; HIGH PERMITTIVITY DIELECTRIC; RAISED SOURCE/DRAIN (S/D) DIELECTRIC; ULTRATHIN BODY (UTB);

MOSFET DEVICES;

EID: 19044363373     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.846584     Document Type: Article

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