A Novel Lateral Field Emitter Triode with lnsitu Vacuum Encapsulation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 305-308

  Park, Cheol Min ^a   Lim, Moo Sup ^a   Min, Byung Hyuk ^a   Han, Min Koo ^a   Choi, Yeam Ik ^b  

^a Seoul National University   (South Korea)

^b Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON-BEAM; FIELD EMITTER; ISOTROPICS; LOW TURN-ON VOLTAGES; REACTIVE ION; SEALING PROCESS; VACUUM SEALING; VACUUM SEALS;

FIELD EMISSION; TRIODES;

CURRENT DENSITY; ENCAPSULATION; IN SITU PROCESSING; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE; VACUUM APPLICATIONS;

FIELD EMITTER TRIODE; MOLYBDENUM VACUUM SEALS; VACUUM ENCAPSULATION;

EID: 0030387346     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553590     Document Type: Conference Paper

References (6)

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2. C.A. Spindt, C. E. Holland, P. R. Schwoebel, and I. Brodie, “Field-Emitter-Array Development for Microwave Applications,” IEDM-95, pp. 389-392, 1995.
3. H. H Busta, J. E. Pogemiller, and B. J. Zimmerman “Design of High-Vacuum Test Station for Rapid Evaluation of Vacuum Microelectronics Devices”, IEEE Trans. Electron Devic-es, vol. 38, no. 10, pp. 2350-2354, 1991.
4. H. H Busta, J. E. Pogemiller, and M. F. Roth, “Lateral Miniaturized Vacuum Devices”, IEDM-89, pp. 533-536, 1989.
5. C. G. Lee, B. G. Park, and J. D. Lee, “A New Fabrication Process of Field Emitter Arrays with Submicron Gate Apertures Using Local Oxidation of Silicon,” IEEE Electron Device Letters, vol. 17, no. 3, pp. 115-117, 1996.
6. T. T. Tsong, “Dynamic Behavior and Instability of Field Emitter Surfaces,” IEEE Trans. Electron Devices, vol. 38,110. 10,pp. 2317-2319, 1991.