Gate-side air-gap structure (GAS) to reduce the parasitic capacitance in MOSFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 38-39

  Togo, M ^a   Tanabe, A ^a   Furukawa, A ^a   Tokunaga, K ^a   Hashimoto, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CAPACITANCE; CAPACITANCE MEASUREMENT; COMPUTER SIMULATION; ETCHING; GATES (TRANSISTOR); ION IMPLANTATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING BORON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON NITRIDE;

GATE SIDE AIR GAP STRUCTURE; SHORT CHANNEL EFFECTS; WET ETCHING;

MOSFET DEVICES;

EID: 0029713472     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)