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Applied Physics A: Materials Science and Processing

Volumn 85, Issue 3, 2006, Pages 217-225

Germanium nanowires: From synthesis, surface chemistry, and assembly to devices

(2) Wang, D a Dai, H b

a California Institute of Technology (United States)

b STANFORD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASSEMBLY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; FEEDSTOCKS; FIELD EFFECT TRANSISTORS; GERMANIUM COMPOUNDS; OXIDATION; SEMICONDUCTOR DOPING; SURFACE CHEMISTRY;

ALKANETHIOLS; GATE DIELECTRICS; GERMANIUM NANOWIRES; TEMPERATURE SYNTHESIS;

NANOSTRUCTURED MATERIALS;

EID: 33750178280 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-006-3704-z Document Type: Article

Times cited : (72)

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