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Volumn 114-116, Issue , 2001, Pages 415-420

XPS investigation of the equilibrium segregation of antimony at germanium surface

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; BINDING ENERGY; ETCHING; HEAT TREATMENT; INTERDIFFUSION (SOLIDS); SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; VACUUM APPLICATIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0035277867     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0368-2048(00)00385-6     Document Type: Article
Times cited : (4)

References (16)
  • 2
    • 0342802288 scopus 로고
    • Surface segregation, diffusion and defects data, solid state phenomenon
    • Du Plessis J. Surface segregation, diffusion and defects data, solid state phenomenon. Sci. Tech. 11:1990.
    • (1990) Sci. Tech , vol.11
    • Du Plessis, J.1
  • 15
    • 0003997990 scopus 로고
    • D. Shaw. London: Plenum Publishing Company
    • Shaw D. Atomic Diffusion in Semiconductors. 1973;Chapter 5 Plenum Publishing Company, London.
    • (1973) Atomic Diffusion in Semiconductors , pp. 5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.