Fabrication of silicon nitride film using pure nitrogen plasma generated near atmospheric pressure for III-V semiconductor fabrication

Materials Research Society Symposium Proceedings

Volumn 831, Issue , 2005, Pages 671-676

  Hayakawa, R ^a   Yoshimura, T ^a   Nakae, M ^a   Uehara, T ^b   Ashida, A ^a   Fujimura, N ^a  

^a Osaka Prefecture University   (Japan)

^b SEKISUI CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CYCLOTRON RESONANCE; ELECTRIC POTENTIAL; NITROGEN; SEMICONDUCTOR MATERIALS; SILICON WAFERS;

NITROGEN GAS PRESSURE; RADIO FREQUENCY; SEMICONDUCTOR FABRICATION; SILICON NITRIDE FILMS;

SILICON NITRIDE;

EID: 23844525505     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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