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Volumn 97, Issue 10, 2005, Pages
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Study of interdiffusion in GaInNAs/GaAs quantum well structure emitting at 1.3 μm by eight-band k · p method
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND GAP;
IN-PLANE STRAIN;
INTERDIFFUSION EFFECTS;
WAVELENGTH;
BAND STRUCTURE;
DIFFUSION;
GALLIUM COMPOUNDS;
GROUND STATE;
INTERDIFFUSION (SOLIDS);
LASER APPLICATIONS;
PHASE TRANSITIONS;
REFRACTIVE INDEX;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 20944443970
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1899226 Document Type: Article |
Times cited : (25)
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References (23)
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